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Si4972DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A) a Q g (Typ.)
? Halogen-free According to IEC 61249-2-21
Available
Channel 1
Channel 2
30
30
0.0145 at V GS = 10 V
0.0195 at V GS = 4.5 V
0.0265 at V GS = 10 V
0.036 at V GS = 4.5 V
10.8
9.3
7.2
6.2
8.3
4
? TrenchFET ? Power MOSFET
? 100 % R g Tested
APPLICATIONS
? Logic DC/DC for Notebook PC
SO-8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4972DY-T1-E3 (Lead (P b )-free)
S 1
S 2
Si4972DY-T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Channel 1
10.8
30
± 20
Channel 2
7.2
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
8.7
8.7 b,c
6.9 b,c
5.7
6.4 b,c
5.1 b,c
Pulsed Drain Current (10 μs Pulse Width)
I DM
20
20
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
2.5
1.6 b,c
20
2.1
1.6 b,c
20
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I AS
E AS
15
11
6
1.8
mJ
T C = 25 °C
3.1
2.5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.1
2.0 b,c
1.6
2.0 b,c
W
T A = 70 °C
1.25 b,c
1.25 b,c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel 1
Channel 2
Parameter
Symbol
Typical Maximum
Typical Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady
R thJA
R thJF
52 62.5
32 40
55 62.5
40 50
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W (Ch 1) and 120 °C/W (Ch 2).
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
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